Controlled quantum dot formation in atomically engineered graphene nanoribbons field-effect transistors

TL;DR

This study demonstrates the controlled formation of quantum dots in atomically engineered graphene nanoribbons integrated into field-effect transistors, revealing their electronic behavior and potential for nano-electronic applications.

Contribution

It provides experimental and theoretical evidence of quantum dot behavior in atomically precise GNRs within device architectures, advancing GNR-based nano-electronic device development.

Findings

GNRs exhibit metal-like behavior at room temperature

Single-electron transistor behavior observed below 150 K

Addition energies of 200-300 meV measured via spectroscopy

Abstract

Graphene nanoribbons (GNRs) have attracted a strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges towards their exploitation in electronic applications include reliable contacting, complicated by their small size ($<$50 nm), as well as the preservation of their physical properties upon device integration. In this combined experimental and theoretical study, we report on the quantum dot (QD) behavior of atomically precise GNRs integrated in a device geometry. The devices consist of a film of aligned 5-atoms wide GNRs (5-AGNRs) transferred onto graphene electrodes with a sub 5-nm nanogap. We demonstrate that the narrow-bandgap 5-AGNRs exhibit metal-like behavior resulting in linear IV curves for low bias voltages at room temperature and single-electron transistor behavior for temperatures below 150~K. By performing spectroscopy of the molecular levels at 13~K, we obtain addition energies in the range of 200-300 meV. DFT calculations predict comparable addition energies and reveal the presence of two electronic states within the bandgap of infinite ribbons when the finite length of the 5-AGNRs is accounted for. By demonstrating the preservation of the 5-AGNRs electronic properties upon device integration, as demonstrated by transport spectroscopy, our study provides a critical step forward in the realisation of more exotic GNR-based nano-electronic devices.