Coulomb-Engineered Heterojunctions and Dynamical Screening in Transition Metal Dichalcogenide Monolayers
Christina Steinke, Tim O. Wehling, Malte R\"osner

TL;DR
This paper investigates how the dielectric environment influences the electronic properties of monolayer transition metal dichalcogenides (TMDCs), demonstrating the potential for non-invasive Coulomb engineering of heterojunctions with nanoscale precision.
Contribution
It provides a quantitative analysis of dielectric and dynamic screening effects in TMDCs, introducing a multi-scale model for Coulomb-engineered heterojunctions with nanoscale band gap control.
Findings
Symmetric, rigid-shift-like band gap modulations observed.
Short-range self-energies enable effective multi-scale modeling.
Nanoscale band gap modulations are achievable with structured substrates.
Abstract
The manipulation of two-dimensional materials via their dielectric environment offers novel opportunities to control electronic as well as optical properties and allows to imprint nanostructures in a non-invasive way. Here we asses the potential of monolayer semiconducting transition metal dichalcogenides (TMDCs) for Coulomb engineering in a material realistic and quantitative manner. We compare the response of different TMDC materials to modifications of their dielectric surrounding, analyze effects of dynamic substrate screening, i.e. frequency dependencies in the dielectric functions, and discuss inherent length scales of Coulomb-engineered heterojunctions. We find symmetric and rigid-shift-like quasi-particle band-gap modulations for both, instantaneous and dynamic substrate screening. From this we derive short-ranged self energies for an effective multi-scale modeling of Coulomb…
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