Towards scalable silicon quantum computing
M. Vinet, L. Hutin, B. Bertrand, S. Barraud, J.-M. Hartmann, Y.-J., Kim, V. Mazzocchi, A. Amisse, H. Bohuslavskyi, L. Bourdet, A. Crippa, X., Jehl, R. Maurand, Y.-M. Niquet, M. Sanquer, B. Venitucci, B. Jadot, E., Chanrion, P.-A. Mortemousque, C. Spence, M. Urdampilleta
TL;DR
This paper discusses the progress and challenges in developing scalable silicon spin qubits for quantum computing, emphasizing the benefits of thin film technology and in situ tunability for scalable architectures.
Contribution
It reviews the advantages of silicon spin qubits fabricated with thin film technology and their potential for scalable quantum computing architectures.
Findings
Thin film silicon devices allow in situ property tuning.
Scalability benefits from device fabrication in thin film technology.
Challenges remain in achieving large-scale, reliable silicon spin qubit systems.
Abstract
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures.
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