All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

TL;DR

This paper demonstrates the electrical control of a hybrid electron spin/valley qubit in SOI CMOS technology, showing how back-gate control can switch the qubit between different operational states, advancing quantum computing integration.

Contribution

It introduces an all-electrical control method for a hybrid spin/valley qubit in SOI CMOS devices, utilizing standard fabrication processes.

Findings

Successful experimental control of electron spin in SOI quantum dots

Back-gate enables switching between charge-sensitive and protected qubit states

Demonstrates compatibility with standard CMOS technology

Abstract

We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected configuration.