Si CMOS Platform for Quantum Information Processing

TL;DR

This paper demonstrates a silicon CMOS-based quantum bit device using standard fabrication technology, encoding qubits in hole spins within a quantum dot, and performing coherent control via RF signals.

Contribution

It introduces the first quantum bit device on a foundry-compatible Si CMOS platform using SOI NanoWire MOSFET technology.

Findings

Successful implementation of a quantum dot qubit in Si CMOS

Coherent spin manipulation achieved with RF E-Field signals

Device fabrication compatible with existing semiconductor manufacturing

Abstract

We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a hole Quantum Dot defined by one of the Gates. Coherent spin manipulation is performed by means of an RF E-Field signal applied to the Gate itself.