Silicon-vacancy color centers in phosphorus-doped diamond

TL;DR

This paper demonstrates the creation of silicon vacancy (SiV) color centers in phosphorus-doped diamond, enabling single-photon emission with suppressed background noise, advancing quantum photonics integration.

Contribution

It investigates conditions for SiV single-photon emission in phosphorus-doped diamond and shows suppression of background fluorescence, a novel step for quantum device development.

Findings

Single-photon emitters achieved at low Si-ion fluences.

Background fluorescence can be significantly suppressed.

SiV centers are viable in phosphorus-doped diamond for quantum applications.

Abstract

The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this study, we create SiV color centers in diamond samples with different phosphorus concentrations and show that the fluorescence background due to doping, nitrogen-impurities and ion implantation induced defects can be significantly suppressed. Single-photon emitters in phosphorus-doped diamond are obtained at the low Si-ion implantation fluences.