Direction and symmetry transition of the vector order parameter in topological superconductors Cu$_x$Bi$_2$Se$_3$
T. Kawai, C. G. Wang, Y. Kandori, Y. Honoki, K. Matano, T. Kambe, and, Guo-qing Zheng

TL;DR
This study investigates the vector order parameter and its pinning mechanism in Cu$_x$Bi$_2$Se$_3$ topological superconductors, revealing a transition from nematic to isotropic gap symmetry with increasing carrier density.
Contribution
It provides new insights into the directional behavior of the order parameter and identifies a symmetry transition driven by doping levels in Cu$_x$Bi$_2$Se$_3$.
Findings
Different $H_{c2}$ minima angles indicate varying $ extbf{d}$-vector directions.
High doping levels lead to disappearance of $H_{c2}$ anisotropy.
Transition from nematic to isotropic gap symmetry with increased carrier density.
Abstract
Topological superconductors have attracted wide-spreading interests for the bright application perspectives to quantum computing. CuBiSe is a rare bulk topological superconductor with an odd-parity wave function, but the details of the vector order parameter and its pinning mechanism are still unclear. We have succeeded in growing CuBiSe single crystals with unprecedented high doping levels. For samples with = 0.28, 0.36 and 0.37 with similar carrier density as evidenced by Knight shift, the in-plane upper critical field shows a two-fold symmetry. However, the angle at which the becomes minimal is different by 90 among them, which indicates that the -vector direction is different for each crystal likely due to a different local environment. The carrier density for = 0.46 and 0.54 increases…
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