Control of single spin in CMOS devices and its application for quantum bits
R. Maurand, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, A. Crippa, R., Lavi\'eville, L. Hutin, S. Barraud, M. Vinet, S.De Franceschi, X. Jehl, M., Sanquer

TL;DR
This paper demonstrates the measurement and manipulation of a single spin in a CMOS device, establishing a method for defining qubits using standard industrial fabrication processes at low temperatures.
Contribution
It introduces a novel approach to create and control spin-based qubits within CMOS technology using microwave electric fields, bridging quantum computing and industrial fabrication.
Findings
Successful measurement and manipulation of a single spin in CMOS
Demonstration of spin qubit operation at very low temperatures
Proof-of-principle for defining qubits via conventional fabrication processes
Abstract
We show how to measure and manipulate a single spin in a CMOS device fabricated in a pre-industrial 300 mm CMOS foundry. The device can be used as a spin quantum bit working at very low temperature. The spin manipulation is done by a microwave electric field applied directly on a gate. The presented results are a proof-of-principle demonstration of the possibility to define qubits by means of conventional industrial fabrication processes.
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Taxonomy
TopicsQuantum and electron transport phenomena · Quantum Computing Algorithms and Architecture · Quantum-Dot Cellular Automata
