Inlaid ReS2 Quantum Dots in Monolayer MoS2

TL;DR

This paper demonstrates the fabrication of in-plane ReS2 quantum dots within monolayer MoS2 using a two-step CVD process, revealing unique charge transfer properties and paving the way for quantum devices in 2D materials.

Contribution

It introduces a novel method to create in-plane ReS2 quantum dots in MoS2 monolayers, enabling new quantum confinement effects in 2D materials.

Findings

Size-dependent crystal structure evolution observed.

Abnormal charge transfer between ReS2 QDs and MoS2 matrix.

Potential for in-plane quantum-confined devices in 2D materials.

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are prospective materials for quantum devices owing to their inherent 2D confinements. They also provide a platform to realize even lower-dimensional in-plane electron confinement, e.g., 0D quantum dots, for exotic physical properties. However, fabrication of such laterally confined monolayer (1L) nanostructure in 1L crystals remains challenging. Here we report the realization of 1L ReS2 quantum dots epitaxially inlaid in 1L MoS2 by a two-step chemical vapor deposition method combining with plasma treatment. The lateral lattice mismatch between ReS2 and MoS2 leads to size-dependent crystal structure evolution and in-plane straining of the 1L ReS2 nanodots. Optical spectroscopies reveal the abnormal charge transfer between the 1L ReS2 quantum dots and the MoS2 matrix, resulting from electron trapping in the 1L ReS2 quantum dots. This study may pave the way for realizing in-plane quantum-confined devices in 2D materials for potential applications in quantum information.