Enhanced superconductivity in few-layer TaS$_2$ due to healing by oxygenation
J. Bekaert, E. Khestanova, D. G. Hopkinson, J. Birkbeck, N. Clark, M., Zhu, D. A. Bandurin, R. Gorbachev, S. Fairclough, Y. Zou, M. Hamer, D. J., Terry, J. J. P. Peters, A. M. Sanchez, B. Partoens, S. J. Haigh, M. V., Milo\v{s}evi\'c, and I. V. Grigorieva

TL;DR
This study demonstrates that oxygenation heals sulfur vacancies in ultrathin TaS2, significantly enhancing its superconducting critical temperature by increasing electron-phonon coupling, revealing defect engineering as a route to improve 2D superconductor performance.
Contribution
The paper shows that oxygenation heals sulfur vacancies in ultrathin TaS2, boosting electron-phonon coupling and superconductivity, which is a novel defect engineering approach for 2D materials.
Findings
Oxygen incorporation is energetically favorable and heals sulfur vacancies.
Enhanced electron-phonon coupling by up to 80% in oxygenated TaS2.
Superconducting critical temperature increases with oxygenation and aging.
Abstract
When approaching the atomically thin limit, defects and disorder play an increasingly important role in the properties of two-dimensional materials. Superconductivity is generally thought to be vulnerable to these effects, but here we demonstrate the contrary in the case of oxygenation of ultrathin tantalum disulfide (TaS). Our first-principles calculations show that incorporation of oxygen into the TaS crystal lattice is energetically favourable and effectively heals sulfur vacancies typically present in these crystals, thus restoring the carrier density to the intrinsic value of TaS. Strikingly, this leads to a strong enhancement of the electron-phonon coupling, by up to 80% in the highly-oxygenated limit. Using transport measurements on fresh and aged (oxygenated) few-layer TaS, we found a marked increase of the superconducting critical temperature ()…
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