An Energy-Efficient Heterogeneous Memory Architecture for Future Dark Silicon Embedded Chip-Multiprocessors
Salman Onsori, Arghavan Asad, Kaamran Raahemifar, and Mahmood Fathy

TL;DR
This paper proposes a convex optimization-based 3D hybrid memory architecture combining eDRAM and STT-RAM to reduce energy consumption in future embedded chip-multiprocessors, addressing leakage and endurance challenges.
Contribution
It introduces a novel convex optimization model for designing energy-efficient, reliable hybrid memory systems optimized for dark silicon embedded chip-multiprocessors.
Findings
Energy consumption reduced by 61.33% compared to baseline.
Performance improved by 9% over baseline.
Optimized memory placement exploits advantages of eDRAM and STT-RAM.
Abstract
Main memories play an important role in overall energy consumption of embedded systems. Using conventional memory technologies in future designs in nanoscale era causes a drastic increase in leakage power consumption and temperature-related problems. Emerging non-volatile memory (NVM) technologies offer many desirable characteristics such as near-zero leakage power, high density and non-volatility. They can significantly mitigate the issue of memory leakage power in future embedded chip-multiprocessor (eCMP) systems. However, they suffer from challenges such as limited write endurance and high write energy consumption which restrict them for adoption in modern memory systems. In this article, we present a convex optimization model to design a 3D stacked hybrid memory architecture in order to minimize the future embedded systems energy consumption in the dark silicon era. This proposed…
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