Thermonuclear Reaction Rate of $^{30}$Si(p,$\gamma$)$^{31}$P
John Dermigny, Christian Iliadis, Art Champagne, Richard Longland

TL;DR
This study refines the $^{30}$Si(p,$ ext{γ}$)$^{31}$P reaction rate by measuring key resonances, significantly reducing uncertainties and impacting models of silicon synthesis in globular cluster environments.
Contribution
The paper provides new resonance strength measurements for the $^{30}$Si(p,$ ext{γ}$)$^{31}$P reaction, leading to a revised, lower reaction rate with reduced uncertainty.
Findings
Resonance strength at 435 keV was measured as (1.28 ± 0.25) × 10^{-4} eV.
Resonance strength at 501 keV was measured as (1.88 ± 0.14) × 10^{-1} eV.
The reaction rate at relevant temperatures is reduced by a factor of approximately 10.
Abstract
Silicon synthesis in high-temperature hydrogen burning environments presents one possible avenue for the study of abundance anomalies in globular clusters. This was suggested in a previous study, which found that the large uncertainties associated with the Si(p,)P reaction rate preclude a firm understanding of the stellar conditions that give rise to the Mg-K anti-correlation observed in the globular cluster NGC 2419. In an effort to improve the reaction rate, we present new strength measurements of the keV and keV resonances in Si(p,)P. For the former, which was previously unobserved, we obtain a resonance strength of ) eV. For the latter, we obtain a value of eV, which has a smaller uncertainty compared to…
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