Electrically Driven Hot-Carrier Generation and Above-threshold Light Emission in Plasmonic Tunnel Junctions
Longji Cui, Yunxuan Zhu, Mahdiyeh Abbasi, Arash Ahmadivand, Burak, Gerislioglu, Peter Nordlander, and Douglas Natelson

TL;DR
This study investigates above-threshold light emission in plasmonic tunnel junctions, revealing a giant material dependence and a hot-carrier generation mechanism driven by localized plasmons, with implications for photochemistry and quantum optics.
Contribution
It provides the first comprehensive analysis of above-threshold emission in electromigrated tunnel junctions, highlighting the role of hot carriers and material effects beyond plasmonic enhancement.
Findings
Photon yield varies by up to four orders of magnitude across materials.
Emission spectra fit a Boltzmann distribution with temperatures over 2000 K.
Effective temperature scales linearly with applied bias.
Abstract
Above-threshold light emission from plasmonic tunnel junctions, when emitted photons have energies significantly higher than the energy scale of the incident electrons, has attracted much recent interest in nano-optics, while the underlying physical mechanism remains elusive. We examine above-threshold light emission in electromigrated tunnel junctions. Our measurements over a large ensemble of devices demonstrate a giant material dependence of photon yield (emitted photons per incident electrons), as large as four orders of magnitude. This dramatic effect cannot be explained only by the radiative field enhancement effect due to the localized plasmons in the tunneling gap. Emission is well described by a Boltzmann spectrum with an effective temperature exceeding 2000 K, coupled to a plasmon-modified photonic density of states. The effective temperature is approximately linear in the…
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