Tuning spatial entanglement in interacting few-electron quantum dots

TL;DR

This paper develops a variational method to accurately compute two-electron wavefunctions in quantum dots, analyzing how geometrical parameters and external fields influence spatial entanglement and electron clustering.

Contribution

It introduces a novel variational formulation and numerical integration technique for modeling few-electron quantum dots, enabling detailed analysis of entanglement and electron clustering.

Findings

Spatial entanglement saturates at universal values with increasing dot separation.

Resonances in entanglement occur due to avoided level-crossings.

External electric fields can precisely tune entanglement levels.

Abstract

Confined geometries such as semiconductor quantum dots are promising candidates for fabricating quantum computing devices. When several quantum dots are in proximity, spatial correlation between electrons in the system becomes significant. In this article, we develop a fully variational action integral formulation for calculating accurate few-electron wavefunctions in configuration space, irrespective of potential geometry. To evaluate the Coulomb integrals with high accuracy, a novel numerical integration method using multiple Gauss quadratures is proposed. Using this approach, we investigate the confinement of two electrons in double quantum dots, and evaluate the spatial entanglement. We investigate the dependence of spatial entanglement on various geometrical parameters. We derive the two-particle wavefunctions in the asymptotic limit of the separation distance between quantum dots, and obtain universal saturation values for the spatial entanglement. Resonances in the entanglement values due to avoided level-crossings of states are observed. We also demonstrate the formation of electron clusters, and show that the entanglement value is a good indicator for the formation of such clusters. Further, we show that a precise tuning of the entanglement values is feasible with applied external electric fields.