Multifilamentary character of anticorrelated capacitive and resistive switching in memristive structures based on (CoFeB)x(LiNbO3)100-x nanocomposite
M.N. Martyshov, A.V. Emelyanov, V.A. Demin, K.E. Nikiruy, A.A., Minnekhanov, S.N. Nikolaev, A.N. Taldenkov, A.V. Ovcharov, M.Yu. Presnyakov,, A.V. Sitnikov, A.L. Vasiliev, P.A. Forsh, A.B. Granovskiy, P.K. Kashkarov,, M.V. Kovalchuk, V.V. Rylkov

TL;DR
This study investigates the resistive and capacitive switching behaviors in nanocomposite-based memristive structures, revealing a multifilamentary switching mechanism and significant capacity changes linked to structural features.
Contribution
It introduces a novel model explaining the multifilamentary resistive and capacitive switching in (CoFeB)x(LiNbO3)100-x nanocomposite structures, supported by experimental and magnetic studies.
Findings
Capacitance increases up to 8 times during switching.
Resistance ratio Roff/Ron reaches approximately 40.
Structural features like LiNbO3 layers influence switching behavior.
Abstract
Resistive and capacitive switching in capacitor metal/nanocomposite/metal (M/NC/M) structures based on (CoFeB)x(LiNbO3)100-x NC fabricated by ion-beam sputtering with metal content x 8-20 at. % is studied. The peculiarity of the structure synthesis was the use of increased oxygen content ( 2*10^-5 Torr) at the initial stage of the NC growth. The NC films, along with metal nanogranules of 3-6 nm in size, contained a large number of dispersed Co (Fe) atoms (up to ~10^22 cm^-3). Measurements were performed both in DC and AC (frequency range 5-13 MHz) regimes. When switching structures from high-resistance (Roff) to low-resistance (Ron) state, the effect of a strong increase in their capacity was found, which reaches 8 times at x 15 at. % and the resistance ratio Roff/Ron 40. The effect is explained by the synergetic combination of the multifilamentary…
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