Temperature dependence of photoluminescence lifetime of atomically thin WSe2 layer
Aleksandra {\L}opion, Mateusz Goryca, Tomasz Smole\'nski, Kacper, Oreszczuk, Karol Nogajewski, Maciej R. Molas, Marek Potemski, Piotr Kossacki

TL;DR
This study investigates how the photoluminescence lifetime of monolayer WSe2 decreases with temperature, revealing that nonradiative relaxation channels become dominant at higher temperatures, affecting localized exciton emission.
Contribution
It provides the first time-resolved measurement linking temperature-dependent PL intensity decrease to nonradiative relaxation in monolayer WSe2.
Findings
PL decay time decreases with temperature
Nonradiative channels dominate at higher temperatures
Localized exciton emission is quenched by thermal effects
Abstract
At cryogenic temperatures, the photoluminescence spectrum of monolayer WSe2features a num-ber of lines related to the recombination of so-called localized excitons. The intensity of these lines strongly decreases with increasing temperature. In order to understand the mechanism behind this phenomenon, we carried out a time-resolved experiment, which revealed a similar trend in the photoluminescence decay time. Our results identify the opening of additional nonradiative relaxation channels as a primary cause of the observed temperature quenching of the localized excitons' photoluminescence.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsChalcogenide Semiconductor Thin Films · 2D Materials and Applications · Advanced Semiconductor Detectors and Materials
