Deterministic magnetization switching using lateral spin-orbit torque

TL;DR

This paper demonstrates a novel method for deterministic magnetization switching using lateral spin-orbit torque in a zero magnetic field, achieved through local laser annealing creating a lateral Pt gradient in a Pt/Co/Pt structure.

Contribution

The study introduces a field-free, deterministic magnetization switching technique utilizing lateral spin-orbit torque induced by laser annealing, eliminating the need for external magnetic fields or out-of-plane spin current injection.

Findings

Achieved deterministic magnetization switching without external magnetic field.

Identified two mechanisms for SOT: lateral Pt-Co asymmetry and out-of-plane spin currents.

Demonstrated control of switching direction via laser track location and power.

Abstract

Current-induced magnetization switching by spin-orbit torque (SOT) holds considerable promise for next generation ultralow-power memory and logic applications. In most cases, generation of spin-orbit torques has relied on an external injection of out-of-plane spin currents into the magnetic layer, while an external magnetic field along the electric current direction is generally required for realizing deterministic switching by SOT. Here, we report deterministic current-induced SOT full magnetization switching by lateral spin-orbit torque in zero external magnetic field. The Pt/Co/Pt magnetic structure was locally annealed by a laser track along the in-plane current direction, resulting in a lateral Pt gradient within the ferromagnetic layer, as confirmed by microstructure and chemical composition analysis. In zero magnetic field, the direction of the deterministic current-induced magnetization switching depends on the location of the laser track, but shows no dependence on the net polarization of external out-of-plane spin currents. From the behavior under external magnetic fields, we identify two independent mechanisms giving rise to SOT, i.e. the lateral Pt-Co asymmetry as well as out-of-plane injected spin currents, where the polarization and the magnitude of the SOT in the former case depends on the relative location and the laser power of the annealing track. Our results demonstrate an efficient field-free deterministic full magnetization switching scheme, without requiring out-of-plane spin current injection or complex external stack structures.