Analytic view on N body interaction in electrostatic quantum gates and decoherence effects in tight-binding model

TL;DR

This paper provides analytical solutions for quantum gates and decoherence effects in a tight-binding model, offering insights into N-qubit electrostatic quantum systems and their evolution.

Contribution

It introduces analytical methods for describing quantum gates and decoherence in N-body electrostatic quantum systems using tight-binding approximation.

Findings

Analytical solutions for quantum swap and Hadamard gates.

Decoherence effects characterized analytically.

Generalization to N-body electrostatic quantum systems.

Abstract

Analytical solutions describing quantum swap and Hadamard gate are given with the use of tight-binding approximation. Decoherence effects are described analytically for two interacting electrons confined by local potentials with use of tight-binding simplistic model and in Schroedinger formalism with omission of spin degree of freedom. The obtained results can be generalized for the case of N electrostatically interacting quantum bodies confined by local potentials (N-qubit) system representing any electrostatic quantum gate with N1/N-N1 inputs/outputs. The mathematical structure of system evolution with time is specified. Index Terms: quantum computation, entanglement, single-electron devices, position-dependent qubit, Q-Swap Gate, quantum CMOS