Dielectric embedding GW for weakly coupled molecule-metal interfaces
Zhenfei Liu

TL;DR
This paper introduces a computationally efficient GW-based dielectric embedding method for accurately determining electronic level alignments at weakly coupled molecule-metal interfaces, reducing costs while maintaining precision.
Contribution
The authors develop a dielectric embedding approach that enables GW calculations on large interfaces by focusing only on the molecular region, significantly lowering computational demands.
Findings
Successfully applied to benzene on Al(111) and graphite surfaces
Achieved accurate level alignment with reduced computational cost
Assessed GW approximations for weakly coupled interfaces
Abstract
Molecule-metal interfaces have a broad range of applications in nanoscale materials science. Accurate characterization of their electronic structures from first-principles is key in understanding material and device properties. The GW approach within many-body perturbation theory is state-of-the-art and can in principle yield accurate quasiparticle energy levels and interfacial level alignments that are in quantitative agreement with experiments. However, the interfaces are large heterogeneous systems that are currently challenging for first-principles GW calculations. In this work, we develop a GW-based dielectric embedding approach for molecule-metal interfaces, significantly reducing the computational cost of direct GW without sacrificing accuracy. To be specific, we perform explicit GW calculations only in the simulation cell of the molecular adsorbate, in which the dielectric…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
