Characterization of Transition Edge Sensors for the Simons Observatory

TL;DR

This paper details the characterization and testing of transition edge sensors (TES) for the Simons Observatory, focusing on their cryogenic performance, electrical properties, and suitability for CMB observations.

Contribution

It provides detailed test results and analysis of prototype TES devices, informing the fabrication process for the observatory's detectors.

Findings

TES devices achieved required cryogenic temperatures

Electrical and thermal properties characterized successfully

Prototype performance meets design specifications

Abstract

The Simons Observatory is building both large (6 m) and small (0.5 m) aperture telescopes in the Atacama desert in Chile to observe the cosmic microwave background (CMB) radiation with unprecedented sensitivity. Simons Observatory telescopes in total will use over 60,000 transition edge sensor (TES) detectors spanning center frequencies between 27 and 285 GHz and operating near 100 mK. TES devices have been fabricated for the Simons Observatory by NIST, Berkeley, and HYPRES/SeeQC corporation. Iterations of these devices have been tested cryogenically in order to inform the fabrication of further devices, which will culminate in the final TES designs to be deployed in the field. The detailed design specifications have been independently iterated at each fabrication facility for particular detector frequencies. We present test results for prototype devices, with emphasis on NIST high frequency detectors. A dilution refrigerator was used to achieve the required temperatures. Measurements were made both with 4-lead resistance measurements and with a time domain Superconducting Quantum Interference Device (SQUID) multiplexer system. The SQUID readout measurements include analysis of current vs voltage (IV) curves at various temperatures, square wave bias step measurements, and detector noise measurements. Normal resistance, superconducting critical temperature, saturation power, thermal and natural time constants, and thermal properties of the devices are extracted from these measurements.