Spatially controlled fabrication of single NV centers in IIa HPHT diamond
S. D. Trofimov, S. A. Tarelkin, S. V. Bolshedvorskii, V. S. Bormashov,, S. Yu. Troshchiev, A. V. Golovanov, N. V. Luparev, D. D. Prikhodko, K. N., Boldyrev, S. A. Terentiev, A. V. Akimov, N. I. Kargin, N. S. Kukin, A. S., Gusev, A. A. Shemukhin, Yu. V. Balakshin, S. G. Buga
TL;DR
This paper demonstrates a method to fabricate single NV centers in specific locations within HPHT IIa diamond using helium implantation through lithographic masks, highlighting the importance of the {001} growth sector for optimal results.
Contribution
It introduces a controlled fabrication technique for single NV centers in HPHT diamond, emphasizing the significance of the {001} growth sector for precise placement.
Findings
The {001} growth sector yields the highest concentration of single NV centers.
Helium implantation through lithographic masks enables spatial control of NV center placement.
The method is suitable for applications requiring precisely located single NV centers.
Abstract
Single NV centers in HPHT IIa diamond are fabricated by helium implantation through lithographic masks. The concentrations of created NV centers in different growth sectors of HPHT are compared quantitatively. It is shown that the purest {001} growth sector (GS) of HPHT diamond allows to create groups of single NV centers in predetermined locations. The {001} GS HPHT diamond is thus considered a good material for applications that involve single NV centers.
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