Crystallization of Cuprous Oxide Thin Films by Continuous-Wave Laser Diode with Micro-Chevron Laser Beam ({\mu}-CLB)

TL;DR

This paper demonstrates the use of a continuous-wave micro-chevron laser diode to crystallize Cu2O thin films, enabling new applications for multi-element thin film materials through laser-induced crystallization.

Contribution

It introduces a novel laser crystallization technique using a micro-chevron laser beam for multi-element thin films like Cu2O.

Findings

Successful crystallization of Cu2O thin films using micro-chevron laser

Enhanced crystallinity and optical properties confirmed by spectroscopy

Potential for extending laser crystallization to complex metal oxides

Abstract

Crystallization of thin film materials by exploiting laser induced crystallization has been advancing for the past four decades. This unique thin film technique has been predominantly used in processing thin film materials made of a single chemical element; however, harnessing this technique to extend its use for thin film materials containing multiple chemical elements (e.g., metal oxides) unlocks applications currently not accessible. In this study, laser crystallization of a Cu2O strip was demonstrated. A continuous-wave laser diode with a micrometer-scale chevron-shaped beam profile (micro chevron laser beam) was used to crystallize CuO thin films covered with an amorphous carbon (a-C) cap layer, deposited on fused silica substrates. Electron backscatter diffraction, Raman spectroscopy, photoluminescence spectroscopy, and UV-Vis spectroscopy were used to investigate the crystallinity and optical properties of the Cu2O thin films revealing their unique characteristics associated with the crystallization process.