Engineering of the topological magnetic moment of electrons in bilayer graphene using strain and electrical bias

TL;DR

This paper explores how strain and electrical bias can be used to control the topological magnetic moment in bilayer graphene, affecting its electronic and magneto-transport properties.

Contribution

It demonstrates the tunability of the valley g-factor in bilayer graphene through strain and bias, revealing new ways to manipulate topological magnetic moments.

Findings

Valley g-factor can be varied from 10 to 200.

Topological magnetic moment influences Hall conductivity.

Landau level spectrum is affected by tunable magnetic moments.

Abstract

Topological properties of electronic states in multivalley two-dimensional materials, such as mono- and bilayer graphene, or thin films of rhombohedral graphite, give rise to various unusual magneto-transport regimes. Here, we investigate the tunability of the topological magnetic moment (related to the Berry curvature) of electronic states in bilayer graphene using strain and vertical bias. We show how one can controllably vary the valley $g$-factor of the band-edge electrons, $g_v^*$, across the range $10 < |g_v^*| < 200$, and we discuss the manifestations of the topological magnetic moment in the anomalous contribution towards the Hall conductivity and in the Landau level spectrum.