Optimization of the power broadening in optically detected magnetic resonance of defect spins in silicon carbide

TL;DR

This paper investigates how to optimize laser and microwave powers to enhance the contrast and reduce the linewidth in ODMR of defect spins in silicon carbide, aiming to improve quantum sensing sensitivity.

Contribution

It provides a systematic analysis of power-dependent ODMR contrast and linewidth, offering guidelines for optimizing sensing performance in silicon carbide defect spins.

Findings

Magnetic field sensing sensitivity can be improved by a factor of 10.

Optimal laser and microwave power ranges enhance ODMR contrast.

Linewidth reduction leads to better quantum sensing accuracy.

Abstract

Defect spins in silicon carbide have become promising platforms with respect to quantum information processing and quantum sensing. Indeed, the optically detected magnetic resonance (ODMR) of defect spins is the cornerstone of the applications. In this work, we systematically investigate the contrast and linewidth of laser-and microwave power-dependent ODMR with respect to ensemble-divacancy spins in silicon carbide at room temperature. The results suggest that magnetic field sensing sensitivity can be improved by a factor of 10 for the optimized laser and microwave power range. The experiment will be useful for the applications of silicon carbide defects in quantum information processing and ODMR-dependent quantum sensing.