Strongly enhanced upconversion in trivalent erbium ions by tailored gold nanostructures: toward high-efficient silicon-based photovoltaics
Jeppe Christiansen, Joakim Vester-Petersen, S{\o}ren Roesgaard,, S{\o}ren H. M{\o}ller, Rasmus E. Christiansen, Ole Sigmund, S{\o}ren P., Madsen, Peter Balling, and Brian Julsgaard

TL;DR
This study demonstrates a significant enhancement in erbium-based photon upconversion efficiency using tailored gold nanostructures, paving the way for more efficient silicon solar cells beyond current limits.
Contribution
It introduces a novel design of gold nanostructures optimized for maximal electric-field enhancement to boost erbium upconversion efficiency in solar applications.
Findings
Achieved upconversion enhancement factor of 913 at 1.7 Wcm$^{-2}$ excitation.
Developed a semi-empirical model for photonically enhanced upconversion efficiency.
Fabricated nanostructures via electron beam lithography based on topology optimization.
Abstract
Upconversion of sub-band-gap photons constitutes a promising way for improving the efficiency of silicon-based solar cells beyond the Shockley-Queisser limit. 1500 to 980 nm upconversion by trivalent erbium ions is well-suited for this purpose, but the small absorption cross section hinders real-world applications. We employ tailored gold nanostructures to vastly improve the upconversion efficiency in erbium-doped TiO thin films. The nanostructures are found using topology optimization and parameter optimization and fabricated by electron beam lithography. In qualitative agreement with a theoretical model, the samples show substantial electric-field enhancements inside the upconverting films for excitation at 1500 nm for both s- and p-polarization under a wide range of incidence angles and excitation intensities. An unprecedented upconversion enhancement of 913(51) is observed at an…
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