High yield production of ultrathin fibroid semiconducting nanowire of Ta$_2$Pd$_3$Se$_8$

TL;DR

This paper reports a high-yield method for producing ultrathin semiconducting Ta2Pd3Se8 nanowires via liquid-phase exfoliation, demonstrating their high crystallinity, stability, and potential for electronic and photodetector applications.

Contribution

The study introduces a scalable liquid-phase exfoliation technique to produce ultrathin Ta2Pd3Se8 nanowires with high yield, advancing 1D vdW material fabrication.

Findings

Nanowires as thin as 1 nm were produced.

Fabricated nanowire transistors show high switching performance.

Nanowires exhibit high crystallinity and chemical stability.

Abstract

Immediately after the demonstration of the high-quality electronic properties in various two dimensional (2D) van der Waals (vdW) crystals fabricated with mechanical exfoliation, many methods have been reported to explore and control large scale fabrications. Comparing with recent advancements in fabricating 2D atomic layered crystals, large scale production of one dimensional (1D) nanowires with thickness approaching molecular or atomic level still remains stagnant. Here, we demonstrate the high yield production of a 1D vdW material, semiconducting Ta2Pd3Se8 nanowires, by means of liquid-phase exfoliation. The thinnest nanowire we have readily achieved is around 1 nm, corresponding to a bundle of one or two molecular ribbons. Transmission electron microscopy and transport measurements reveal the as-fabricated Ta2Pd3Se8 nanowires exhibit unexpected high crystallinity and chemical stability. Our low frequency Raman spectroscopy reveals clear evidence of the existing of weak inter-ribbon bindings. The fabricated nanowire transistors exhibit high switching performance and promising applications for photodetectors.