A low noise and low power cryogenic amplifier for single photoelectron sensitivity with large arrays of SiPMs
P. Carniti, A. Falcone, C. Gotti, A. Lucchini, G. Pessina, S. Riboldi, and F. Terranova

TL;DR
This paper introduces a cryogenic amplifier with exceptionally low noise and power consumption, optimized for large SiPM arrays in liquid argon and nitrogen, enabling single photoelectron detection.
Contribution
It presents a novel low noise, low power cryogenic amplifier design using a SiGe HBT and differential op-amp for large SiPM arrays in cryogenic environments.
Findings
Input voltage noise below 0.4 nV/√Hz at 77 K
Power consumption around 2.5 mW
Gain-bandwidth product in the GHz range
Abstract
This paper presents a low noise amplifier for large arrays of silicon photomultipliers (SiPMs) operated in cryogenic environments, especially liquid argon (87 K) and liquid nitrogen (77 K). The goal is for one amplifier to read out a total photosensitive surface of tens of cm while retaining the capability to resolve single photoelectron signals. Due to the large capacitance of SiPMs, typically a few nF per cm, the main contributor to noise is the series (voltage) component. A silicon-germanium heterojunction bipolar transistor (HBT) was selected as the input device of the cryogenic amplifier, followed by a fully differential operational amplifier, operated in an unconventional feedback configuration. The input referred voltage noise of the circuit at 77 K is just below 0.4 nV/Hz white (above 100 kHz) and 1 nV/Hz at 10 kHz. The value of the base spreading…
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