Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

TL;DR

This paper demonstrates high-performance MoS2-based printed field-effect transistors on paper, enabling integrated digital and analog circuits suitable for flexible, environmentally friendly electronics in IoT applications.

Contribution

It introduces a novel fabrication method combining CVD and inkjet-printing for high-quality MoS2 transistors on paper, advancing flexible electronics technology.

Findings

Achieved ION/IOFF ratios up to 5 x 10^4.

Mobility up to 26 cm2 V-1 s-1.

Demonstrated functional digital and analog circuits on paper.

Abstract

Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS2 field-effect transistors on paper fabricated with a channel-array approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing.The first allows the pre-deposition of a pattern of MoS2; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average ION/IOFF of 8 x 10^3 (up to 5 x 10^4) and mobility of 5.5 cm2 V-1 s-1 (up to 26 cm2 V-1 s-1) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper.