Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity

TL;DR

This paper demonstrates non-volatile resistive switching in MoS₂-based memristors driven by hydroxyl ions, offering a scalable fabrication process compatible with silicon technology for neuromorphic and ionicelectronic applications.

Contribution

It introduces a novel ion-based resistive switching mechanism in nanocrystalline MoS₂ memristors with a scalable fabrication process.

Findings

Stable bipolar switching with 2500 seconds retention.

Switching driven by hydroxyl ions from water splitting.

Potential for integration into silicon-based neuromorphic systems.

Abstract

Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS$_2$) as the active material. The vertical heterostructures consist of silicon, vertically aligned MoS$_2$ and chrome / gold metal electrodes. Electrical characterizations reveal a bipolar and forming free switching process with stable retention for at least 2500 seconds. Controlled experiments carried out in ambient and vacuum conditions suggest that the observed resistive switching is based on hydroxyl ions (OH$^-$). These originate from catalytic splitting of adsorbed water molecules by MoS$_2$. Experimental results in combination with analytical simulations further suggest that electric field driven movement of the mobile OH$^-$ ions along the vertical MoS$_2$ layers influences the energy barrier at the Si/MoS$_2$ interface. The scalable and semiconductor production compatible device fabrication process used in this work offers the opportunity to integrate such memristors into existing silicon technology for future neuromorphic applications. The observed ion-based plasticity may be exploited in ionicelectronic devices based on TMDs and other 2D materials for memristive applications.