Two-Dimensional Si-Ge Monolayers: Stabilities, Structures and Electronic Properties

TL;DR

This study systematically investigates the stability, structure, and electronic properties of Si-Ge monolayers, revealing stable 2D honeycomb structures, oscillatory band gap behavior, and low carrier effective masses, with potential for high-speed electronic applications.

Contribution

First comprehensive ab initio analysis of Si-Ge monolayers, uncovering their stability, structural characteristics, and unique electronic properties including tunable band gaps.

Findings

Stable 2D honeycomb structures with infinite Si-Ge miscibility.

Oscillatory nonlinear dependence of band gaps on composition.

Low carrier effective masses indicating high-speed device potential.

Abstract

Si-Ge monolayers (SiGeM) with different elementary proportion x (0<x<1) were systematically studied for the first-time using ab initio calculations in this work. The structural stabilities of the Si1-xGexM with different symmetries were investigated using phonon spectra, and an infinite miscibility between Si and Ge elements were revealed in the 2D honeycomb structures. The simulated scanning tunneling microscope images and Raman and infrared active modes of the Si1-xGexM were then obtained for structural characterizations. Interestingly, the study of electronic properties revealed not previously reported oscillatory nonlinear dependence of band gap values on the elementary proportion x in the Si1-xGexM, which suggests an alternative way for tuning the band gaps of 2D materials. Additionally, low effective masses (0.008m0 ~ 0.021m0) of the carriers in the semiconducting Si1-xGexM were found, which has potentials for high-speed applications. Considering the advantage of their compatibility with current Si-based technology and the trend of miniature of electronic devices, the Si1-xGexM with stable structures and excellent properties would be important for 2D applications based on group IV materials.