Atomic Origin of Spin-Valve Magnetoresistance at the SrRuO3 Grain Boundary

TL;DR

This study reveals that atomic-scale defects at SrRuO3 grain boundaries cause spin-valve magnetoresistance by reducing local magnetic moments, offering new pathways for nanoscale magnetic device design.

Contribution

It provides detailed atomic-level insight into defect structures and their impact on magnetic properties in SrRuO3, linking atomic arrangements to magnetoresistance.

Findings

Atomic structure of SrRuO3 grain boundary identified

Magnetic moments are dramatically reduced at the boundary

Spin-valve magnetoresistance observed and explained

Abstract

Defects ubiquitously exist in crystal materials and usually exhibit a very different nature than the bulk matrix, and hence, their presence can have significant impacts on the properties of devices. Although it is well accepted that the properties of defects are determined by their unique atomic environments, the precise knowledge of such relationships is far from clear for most oxides due to the complexity of defects and difficulties in characterization. Here, we fabricate a 36.8{\deg} SrRuO3 grain boundary of which the transport measurements show a spin-valve magnetoresistance. We identify its atomic arrangement, including oxygen, using scanning transmission electron microscopy and spectroscopy. Based on the as-obtained atomic structure, the density functional theory calculations suggest that the spin-valve magnetoresistance is because of the dramatically reduced magnetic moments at the boundary. The ability to manipulate magnetic properties at the nanometer scale via defect control allows new strategies to design magnetic/electronic devices with low-dimensional magnetic order.