Raman scattering studies of the lateral Mn distribution in MBE-grown Ga1-xMnxN epilayers

TL;DR

This study uses UV Raman scattering to map the lateral distribution of Mn in Ga1-xMnxN layers, providing a non-destructive method to analyze Mn concentration and crystalline quality in epitaxial layers.

Contribution

It introduces a UV Raman scattering technique for detailed, non-destructive lateral mapping of Mn distribution in Ga1-xMnxN layers grown by MBE, with implications for optimizing growth conditions.

Findings

Lateral Mn distribution is radial and varies across the layer.

The 1LO phonon frequency correlates with Mn concentration x.

Raman line width and energy assess crystalline quality.

Abstract

Recent interest in very thin single phase Ga1-xMnxN dilute magnetic layers increased needs for precise, non-destructive, and relatively fast characterization methods with key issues being the macroscopic lateral Mn distribution and the absolute values of Mn concentration x. We report on resonantly enhanced UV Raman scattering studies of high quality Ga1-xMnxN layers grown on GaN templated sapphire by molecular beam epitaxy with 4 < x < 9%. The main advantage of the UV excitation is the restriction of the light penetration depth to nearly a hundred nanometers, eliminating signal from the GaN buffer. Under this conditions we determine the dependence of the 1LO phonon frequency on x, what allows for a fine mapping of its lateral distribution over the entire surface of the samples. Our Raman scanning clearly confirms substantial lateral distribution of Mn atoms across the layer, which is radial with respect to its center. From the established distributions in two deliberately chosen layers the magnitude of the optimal growth temperature for most efficient Mn atoms incorporation in epitaxial GaN has been confirmed. It is shown that the combination of the 1LO line width and its energy provides assessment of the crystalline quality of the investigated layers.