Metal$/BaTiO_{3}/\beta-Ga_{2}O_{3}$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

TL;DR

This paper introduces a dielectric heterojunction diode using BaTiO3 and β-Ga2O3 that achieves a high breakdown electric field of 5.7 MV/cm, enabling improved performance in wide band gap semiconductors without bipolar doping.

Contribution

The study demonstrates a novel dielectric heterojunction diode with extreme permittivity materials achieving record high breakdown fields in wide band gap semiconductors.

Findings

Achieved 5.7 MV/cm average electric field in the heterojunction.

Enabled high electric fields while maintaining low on-resistance.

Proposed a new design strategy for wide band gap semiconductor devices.

Abstract

Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics. In materials where p-type doping is not available, achieving this high breakdown field in a vertical diode or transistor is very challenging. We propose and demonstrate the use of dielectric heterojunctions that use extreme permittivity materials to achieve high breakdown field in a unipolar device. We demonstrate the integration of a high permittivity material BaTiO3 with n-type $\beta$-Ga2O3 to enable 5.7 MV/cm average electric field and 7 MV/cm peak electric field at the device edge, while maintaining forward conduction with relatively low on-resistance and voltage loss. The proposed dielectric heterojunction could enable new design strategies to achieve theoretical device performance limits in wide and ultra-wide band gap semiconductors where bipolar doping is challenging.