Molecular beam epitaxy of CuMnAs
Filip Krizek, Zden\v{e}k Ka\v{s}par, Aliaksei Vetushka, Dominik, Kriegner, Elisabetta M. Fiordaliso, Jan Michalicka, Ond\v{r}ej Man, Jan, Zub\'a\v{c}, Martin Brajer, Victoria A. Hills, Kevin W. Edmonds, Peter, Wadley, Richard P. Campion, Kamil Olejn\'ik, Tom\'a\v{s} Jungwirth
TL;DR
This paper investigates the growth, structural properties, and electrical behavior of epitaxial CuMnAs layers grown by molecular beam epitaxy, highlighting how growth conditions affect material quality and switching performance.
Contribution
It provides a comprehensive analysis of growth parameters, defect structures, and substrate effects on CuMnAs, advancing understanding of its epitaxial growth and functional properties.
Findings
Growth conditions significantly influence microstructure and transport properties.
Structural defects correlate with electrical switching performance.
Epitaxial layers on different substrates show distinct properties.
Abstract
We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs and Si substrates. Finally, we investigate the correlation between the crystalline quality of CuMnAs and its performance in terms of electrically induced resistance switching.
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