Zero-field spin-orbit-torque switching driven by magnetic spin Hall effect
Po-Hung Lin, Po-Wei Lee, Yu-Hsuan Lin, Bo-Yuan Yang, Vinod Kumar,, Hsiu-Hau Lin, Chih-Huang Lai

TL;DR
This paper demonstrates zero-field spin-orbit-torque switching driven by the magnetic spin Hall effect in bilayer materials, enabling magnetic and exchange bias control without external magnetic fields, advancing spintronic technology.
Contribution
It introduces the use of magnetic spin Hall effect in bilayer systems for zero-field switching, leveraging non-collinear spin textures in antiferromagnets.
Findings
Achieved simultaneous switching of magnetization and exchange bias without external magnetic field.
Identified the role of non-collinear spin textures in enabling symmetry-breaking in spin-current.
Paved the way for exploring magnetic spin Hall effects in various spin textures.
Abstract
Spin Hall effect plays an essential role in generating spin current from the injected charge current, following the Dyakonov-Perel rule that the directions of charge flow, spin flow and spin polarization are mutually perpendicular to each other. Recently, its generalization from an antiferromagnet, so-called magnetic spin Hall effect, has been studied and verified by measuring anomalous spin accumulations. Here, we investigate the magnetic spin Hall effect in bilayer materials made of a heavy metal and an antiferromagnet. The spin current generated by the magnetic spin Hall effect accomplishes spin-orbit-torque switching for ferromagnetic magnetization and exchange bias concurrently without any external magnetic field. The switching mechanism crucially relies on the non-collinear spin texture in the antiferromagnet, capable of generating symmetry-breaking components in the spin-current…
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Taxonomy
TopicsMagnetic properties of thin films · Quantum and electron transport phenomena · Magnetic Field Sensors Techniques
