Opto-electronic properties of alpha-In2Se3: single-layer to bulk
Yujin Cho, Sean M. Anderson, Bernardo S. Mendoza, Shun Okano, Ramon, Carriles, N. Arzate, Anatoli I. Shkrebtii, Di Wu, Keji Lai, D. R. T. Zahn, M., C. Downer
TL;DR
This study investigates the opto-electronic properties of alpha-In2Se3 across different layer thicknesses using spectroscopic methods and theoretical calculations, revealing how properties evolve from single-layer to bulk form.
Contribution
It provides a comprehensive experimental and theoretical analysis of alpha-In2Se3's opto-electronic behavior from monolayer to bulk, including spectroscopic data and ab initio calculations.
Findings
Layer-dependent optical properties characterized.
Agreement between experimental data and theoretical models.
Insights into band structure evolution with layer thickness.
Abstract
In this work, we report linear and non-linear spectroscopic measurements of chemically-grown layered (from one to 37 quintuple layers) and bulk alpha-In2Se3 samples over a photon energy range of 1.0--4 eV, and compare with ab initio density functional theory calculations, including bandstructures and G0W0 calculations.
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Taxonomy
TopicsChalcogenide Semiconductor Thin Films · 2D Materials and Applications · Quantum Dots Synthesis And Properties