Efficient Spin-Orbit Torque Switching with Non-Epitaxial Chalcogenide Heterostructures
Tian-Yue Chen, Cheng-Wei Peng, Tsung-Yu Tsai, Wei-Bang Liao, Chun-Te, Wu, Hung-Wei Yen, Chi-Feng Pai

TL;DR
This paper demonstrates that non-epitaxial Bi$_{x}$Te$_{1-x}$/ferromagnet heterostructures, prepared via conventional sputtering, exhibit giant spin-orbit torque efficiencies without the need for topologically-protected surface states, enabling potential spintronic applications.
Contribution
It introduces a method to achieve high SOT efficiencies using non-epitaxial chalcogenide heterostructures, bypassing the need for epitaxial growth and topological surface states.
Findings
Achieved SOT efficiencies >100% at room temperature.
Demonstrated current-induced SOT switching in non-epitaxial heterostructures.
Showed potential for use in future spin-orbit torque magnetic memory devices.
Abstract
The spin-orbit torques (SOTs) generated from topological insulators (TIs) have gained increasing attention in recent years. These TIs, which are typically formed by epitaxially grown chalcogenides, possess extremely high SOT efficiencies and have great potential to be employed in the next-generation spintronics devices. However, epitaxy of these chalcogenides is required to ensure the existence of topologically-protected surface state (TSS), which limits the feasibility of using these materials in industry. In this work, we show that non-epitaxial BiTe/ferromagnet heterostructures prepared by conventional magnetron sputtering possess giant SOT efficiencies even without TSS. Through harmonic voltage measurement and hysteresis loop shift measurement, we find that the damping-like SOT efficiencies originated from the bulk spin-orbit interactions of such non-epitaxial…
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