Advanced chemical state studies of oxide films by lab-based HAXPES combining soft and hard X-ray sources
S. Siol (1), J. Mann (2), J. Newman (2), T. Miyayama (3), K. Watanabe, (3), P. Schmutz (1), C. Cancellieri (1), L. P. H. Jeurgens (1) ((1) Empa,, Swiss Federal Laboratories for Materials Science, Technology, Laboratory, for Joining Technologies, Corrosion, D\"ubendorf

TL;DR
This paper demonstrates how lab-based combined soft and hard X-ray photoelectron spectroscopy (HAXPES) can non-destructively analyze the chemical and electronic structure of buried oxide interfaces at different depths, previously only possible at synchrotrons.
Contribution
It introduces the use of commercial lab-based HAXPES systems with both soft and hard X-ray sources for routine chemical state analysis of functional oxides.
Findings
Able to probe local chemical states at various depths in oxide films
Validated technique on Al2O3, SiO2, TiO2 films
Discussed calibration procedures for kinetic energy scale
Abstract
The greater information depth provided in Hard X-ray Photoelectron Spectroscopy (HAXPES) enables non-destructive analyses of the chemistry and electronic structure of buried interfaces. Moreover, for industrially relevant elements like Al, Si and Ti, the combined access to the Al 1s, Si 1s or Ti 1s photoelectron line and its associated Al KLL, Si KLL or Ti KLL Auger transition, as required for local chemical state analysis on the basis of the Auger parameter, is only possible with hard X-rays. Until now, such photoemission studies were only possible at synchrotron facilities. Recently however, the first commercial XPS/HAXPES systems, equipped with both soft and hard X-ray sources, have entered the market, providing unique opportunities for monitoring the local chemical state of all constituent ions in functional oxides at different probing depths, in a routine laboratory environment.…
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Taxonomy
TopicsElectron and X-Ray Spectroscopy Techniques · Electronic and Structural Properties of Oxides · Semiconductor materials and devices
