Study Of Surface Spin-Polarized Electron Accumulation In Topological Insulators Using Scanning Tunneling Microscopy

TL;DR

This study uses scanning tunneling microscopy to observe surface spin-polarized electron accumulation in $Bi_2Se_3$ topological insulators, revealing spin-momentum locking effects and enhancement through tin doping.

Contribution

It provides direct experimental evidence of surface spin-polarized electron accumulation and its enhancement in doped topological insulators using STM techniques.

Findings

Asymmetry in tunneling currents indicates spin accumulation.

Spin-dependent density of states observed in current-carrying samples.

Doping with tin enhances spin accumulation effects.

Abstract

The results of scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying bismuth selenide ($Bi_2Se_3$) samples are reported. Asymmetry in tunneling currents with respect to the change in the direction of bias currents through $Bi_2Se_3$ samples has been observed. It is argued that this asymmetry is the manifestation of surface spin-polarized electron accumulation caused by the ninety-degree electron spin-momentum locking in the topologically protected surface current mode. It is demonstrated that the manifestation of surface spin-polarized electron accumulation is enhanced by tin doping of $Bi_2Se_3$ samples. Furthermore, the appearance of spin-dependent density of states in current carrying $Bi_2Se_3$ samples has also been observed.