Influence of doping level on Brillouin oscillations in GaAs

TL;DR

This study investigates how doping levels in GaAs affect Brillouin oscillations, demonstrating high sensitivity of oscillation amplitude to doping concentration and aligning experimental results with theoretical models.

Contribution

It provides new insights into dopant profiling in GaAs using Brillouin scattering, highlighting the technique's sensitivity to doping variations.

Findings

Brillouin oscillation amplitude varies with doping level

Experimental data agrees with theoretical calculations

Doping influences depth-dependent material properties

Abstract

Time-domain Brillouin scattering has proved to be an unique tool for determining depth dependent material properties. Here, we show the influence of doping level in GaAs on Brillouin oscillations. Measurements were performed on intrinsic, n-type and p-type GaAs samples. The results show high sensitivity of the amplitude of Brillouin oscillations to the doping concentration. The theoretical calculations are in a good agreement with the experimental data. This work provides an insight into the specific dopant profiling as a function of depth.