Spin-flop transition in atomically thin MnPS$_3$ crystals
Gen Long, Hugo Henck, Marco Gibertini, Dumitru Dumcenco, Zhe Wang,, Takashi Taniguchi, Kenji Watanabe, Enrico Giannini, Alberto F. Morpurgo

TL;DR
This study demonstrates that tunneling magnetoresistance can detect antiferromagnetic order in atomically thin MnPS$_3$ crystals, revealing persistent magnetic correlations down to monolayer thickness despite the absence of spin-filtering.
Contribution
It shows that tunneling magnetoresistance can probe antiferromagnetic states in 2D materials without relying on spin-filtering effects, extending magnetic detection methods to antiferromagnetic monolayers.
Findings
Magnetoresistance appears at ~5 T below 78 K in multilayers.
Magnetoresistance persists in monolayers with similar temperature and field scales.
Antiferromagnetic correlations are maintained down to monolayer thickness.
Abstract
The magnetic state of atomically thin semiconducting layered antiferromagnets such as CrI and CrCl can be probed by forming tunnel barriers and measuring their resistance as a function of magnetic field () and temperature (). This is possible because the tunneling magnetoresistance originates from a spin-filtering effect sensitive to the relative orientation of the magnetization in different layers, i.e., to the magnetic state of the multilayers. For systems in which antiferromagnetism occurs within an individual layer, however, no spin-filtering occurs: it is unclear whether this strategy can work. To address this issue, we investigate tunnel transport through atomically thin crystals of MnPS, a van der Waals semiconductor that in the bulk exhibits easy-axis antiferromagnetic order within the layers. For thick multilayers below K, a -dependent…
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