Nickel oxide-based heterostructures with large band offsets
Robert Karsthof, Holger von Wenckstern, Jesus Zuniga-Perez, Christiane, Deparis, Marius Grundmann

TL;DR
This paper investigates the electronic transport properties of NiO-based heterostructures with ZnO and CdO, revealing their potential in optoelectronic devices and topologically protected states due to large band offsets.
Contribution
It provides new insights into band alignments and transport mechanisms in NiO heterostructures, including experimental evidence of conductive layers in CdO/NiO interfaces.
Findings
ZnO/NiO heterojunctions exhibit type-II band alignment.
Efficient UV-converting solar cells were demonstrated using these heterostructures.
CdO/NiO heterostructures host a conductive layer indicative of topologically protected states.
Abstract
We present research results on the electronic transport in heterostructures based on p-type nickel oxide (NiO) with the n-type oxide semiconductors zinc oxide (ZnO) and cadmium oxide (CdO). NiO is a desirable candidate for application in (opto-)electronic devices. However, because of its small electron affinity, heterojunctions with most n-type oxide semiconductors exhibit conduction and valence band offsets at the heterointerface in excess of 1 eV. ZnO/NiO junctions exhibit a so called type-II band alignment, making electron-hole recombination the only process by which a current can vertically flow through the structure. These heterojunctions are nevertheless shown to be of practical use in efficient optoelectronic devices, as exemplified here by our UV-converting transparent solar cells. These devices, although exhibiting high conversion efficiencies, suffer from two light-activated…
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