Comparing domain wall synapse with other Non Volatile Memory devices for on-chip learning in Analog Hardware Neural Network
Divya Kaushik, Utkarsh Singh, Upasana Sahu, Indu Sreedevi, Debanjan, Bhowmik

TL;DR
This paper demonstrates that spin orbit torque driven Domain Wall (DW) devices outperform RRAM and PCM in on-chip learning for analog neural networks, offering more linear synaptic characteristics and significantly lower energy and time consumption.
Contribution
The study introduces the use of DW devices as synapses in neural networks, showing their advantages over RRAM and PCM in terms of linearity, symmetry, and efficiency for on-chip learning.
Findings
DW synapse has more linear and symmetric characteristics.
DW-based neural networks require significantly less energy and time for training.
Successful on-chip learning demonstrated on Fisher's Iris dataset.
Abstract
Resistive Random Access Memory (RRAM) and Phase Change Memory (PCM) devices have been popularly used as synapses in crossbar array based analog Neural Network (NN) circuit to achieve more energy and time efficient data classification compared to conventional computers. Here we demonstrate the advantages of recently proposed spin orbit torque driven Domain Wall (DW) device as synapse compared to the RRAM and PCM devices with respect to on-chip learning (training in hardware) in such NN. Synaptic characteristic of DW synapse, obtained by us from micromagnetic modeling, turns out to be much more linear and symmetric (between positive and negative update) than that of RRAM and PCM synapse. This makes design of peripheral analog circuits for on-chip learning much easier in DW synapse based NN compared to that for RRAM and PCM synapses. We next incorporate the DW synapse as a Verilog-A model…
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