Spin-orbit torque based physical unclonable function
G. Finocchio, T. Moriyama, R. De Rose, G. Siracusano, M. Lanuzza, V., Puliafito, S. Chiappini, F. Crupi, Z. Zeng, T. Ono, M. Carpentieri

TL;DR
This paper proposes a novel PUF based on spin-orbit-torque-MRAM, leveraging the nonlinear magnetic dynamics for secure, reconfigurable, and scalable hardware authentication with experimental validation and simulations.
Contribution
It introduces a new spintronic PUF design using SOT-MRAM's nonlinear magnetic states, demonstrating its robustness and advantages over existing PUF technologies.
Findings
Experimental and simulation validation of random magnetic states
Robustness against voltage and temperature variations
Advantages include non-volatility, reconfigurability, and scalability
Abstract
This paper introduces the concept of spin-orbit-torque-MRAM (SOT-MRAM) based physical unclonable function (PUF). The secret of the PUF is stored into a random state of a matrix of perpendicular SOT-MRAMs. Here, we show experimentally and with micromagnetic simulations that this random state is driven by the intrinsic nonlinear dynamics of the free layer of the memory excited by the SOT. In detail, a large enough current drives the magnetization along an in-plane direction. Once the current is removed, the in-plane magnetic state becomes unstable evolving towards one of the two perpendicular stable configurations randomly. In addition, an hybrid CMOS/spintronics model is used to evaluate the electrical characteristics of a PUF realized with an array of 16x16 SOT-MRAM cells. Beyond robustness against voltage and temperature variations, hardware authentication based on this PUF scheme has…
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