Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

TL;DR

This study demonstrates silicon delta doping in ta;-Ga2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy, achieving high electron densities and sharp charge profiles for advanced electronic applications.

Contribution

It introduces silicon delta doping in ta;-Ga2O3 films and heterostructures with detailed characterization, revealing high-density 2D electron gases and sharp charge confinement.

Findings

Electron sheet charge density up to 8e12 cm-2

Delta-doped ta;-Ga2O3 films have narrow charge profiles (3.5-6.2 nm)

High-density 2D electron gas (6.4e12 cm-2) in heterostructures

Abstract

We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are characterized using capacitance-voltage profiling and secondary-ion mass spectroscopy. Electron sheet charge density in the range of 2.9e12 cm-2 to 8e12 cm-2 with a half width at half maximum ranging from 6.2 nm to 3.5 nm is measured. We also demonstrate a high density (6.4e12 cm-2) degenerate two-dimensional electron gas using a delta-doped \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure.The total charge could also include a contribution from a parallel channel in the \b{eta}-(Al0.26Ga0.74)2O3 alloy barrier.