First-Principles Mapping of the Electronic Properties of Two-Dimensional Materials for Strain-Tunable Nanoelectronics
Kostiantyn V. Sopiha, Oleksandr I. Malyi, Clas Persson

TL;DR
This study uses first-principles calculations to map the electronic properties of various 2D materials under non-uniform strain, providing insights for strain engineering in nanoelectronic device development.
Contribution
It introduces a comprehensive strain mapping approach for 2D materials, revealing new regimes of electronic behavior and emphasizing the need for generalized analysis beyond standard strain directions.
Findings
${eta}$-Te exhibits unique localization of band edges under non-uniform strain.
Strain mapping offers deeper understanding of band gap modulation in 2D materials.
${ m ext{alpha}}$-Te and ${ m ext{beta}}$-Te are more elastic than other 2D compounds.
Abstract
Herein, we demonstrate that first-principles calculations can be used for mapping electronic properties of two-dimensional (2d) materials with respect to non-uniform strain. By investigating four representative single-layer 2d compounds with different symmetries and bonding characters, namely 2d-, phosphorene, -Te, and -Te, we reveal that such a mapping can be an effective guidance for advanced strain engineering and development of strain-tunable nanoelectronics devices, including transistors, sensors, and photodetectors. Thus, we show that -Te and -Te are considerably more elastic compared to the 2d compounds with strong chemical bonding. In case of -Te, the mapping uncovers an existence of curious regimes where non-uniform deformations allow to achieve unique localization of band edges in momentum space that cannot be realized…
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