Near-Infrared Lead Chalcogenide Quantum Dots: Synthesis and Applications in Light Emitting Diodes
Haochen Liu, Huaying Zhong, Fankai Zheng, Yue Xie, Depeng Li, Dan Wu,, Ziming Zhou, Xiao Wei Sun, and Kai Wang
TL;DR
This paper reviews recent advances in synthesizing near-infrared lead chalcogenide quantum dots and their application in high-performance NIR light-emitting diodes, highlighting synthesis strategies and device efficiencies.
Contribution
It provides a comprehensive overview of synthesis methods and device integration techniques for PbX quantum dots in NIR-QLEDs, emphasizing recent progress and challenges.
Findings
High-efficiency PbX quantum dots have been developed.
Significant improvements in NIR-QLED performance have been achieved.
Various synthesis strategies enable tailored optical properties.
Abstract
This paper reviews recent progress in the synthesis of near-infrared (NIR) lead chalcogenide (PbX; PbX=PbS, PbSe, PbTe) quantum dots (QDs) and their applications in NIR QDs based light emitting diodes (NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance PbX based NIR-QLEDs.
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