Voltage-Controlled Magnonic Spin Tunneling Junction

TL;DR

This paper theoretically explores voltage-controlled magnonic spin tunneling in ferromagnetic insulators, demonstrating how bias voltage influences exchange interactions and proposing a novel device combining transistor and memory functions.

Contribution

It introduces a theoretical model showing voltage and spacer thickness effects on exchange interactions and proposes a new magnonic device with combined transistor and memory capabilities.

Findings

Voltage and spacer thickness affect exchange interaction $J_ ext{eff}$

Controllability of $J_ ext{eff}$ via bias voltage is demonstrated

Proposal of a new magnonic device with field effect transistor and memory functions

Abstract

We theoretically investigate the effective exchange interaction, $J_\mathrm{eff}$, mediated by conductive electrons within a nonmagnetic metal spacer, in the presence of a bias voltage, sandwiched by two ferromagnetic insulators. On the basis of the tight-binding model, we show the voltage and spacer thickness dependences of $J_\mathrm{eff}$, and its contorollability is demonstrated. We also propose a new magnonic device with the functions of both field effect transistor and non-volatile memory.