GaSbBi alloys and heterostructures: fabrication and properties

TL;DR

This paper reviews recent advances in the fabrication and characterization of GaSbBi alloys and heterostructures, highlighting their potential for mid-infrared optoelectronic applications.

Contribution

It provides an overview of the latest methods and findings in epitaxy and properties of GaSbBi alloys, addressing challenges in Bi incorporation.

Findings

Successful epitaxy of GaSbBi alloys achieved

Enhanced understanding of Bi incorporation mechanisms

Potential for mid-infrared optoelectronic devices

Abstract

Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2-5 $\mu$m). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This book chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures.