DFT study of itinerant ferromagnetism in $p$-doped monolayers of MoS$_2$
Yuqiang Gao, Nirmal Ganguli, Paul J. Kelly

TL;DR
This study uses density functional theory to investigate how hole doping in monolayer MoS$_2$ can induce ferromagnetism, predicting Curie temperatures up to 160K with specific dopants and analyzing factors affecting magnetic ordering.
Contribution
It provides a detailed theoretical analysis of hole-induced ferromagnetism in MoS$_2$, identifying dopants and conditions that maximize magnetic ordering temperatures.
Findings
Hole states polarize fully in local spin density approximation.
Dopants like V, Nb, Ta induce ferromagnetic coupling.
Predicted Curie temperatures up to 160K for certain dopants.
Abstract
We use density functional theory to explore the possibility of making the semiconducting transition-metal dichalcogenide MoS ferromagnetic by introducing holes into the narrow Mo band that forms the top of the valence band. In the single impurity limit, the repulsive Coulomb potential of an acceptor atom and intervalley scattering lead to a twofold orbitally degenerate effective-mass like state being formed from Mo and states, bound to the K and K valence band maxima. It also leads to a singly degenerate state with Mo character bound to the slightly lower lying valence band maximum at . Within the accuracy of our calculations, these and states are degenerate for MoS and accommodate the hole that polarizes fully in the local spin density approximation in the impurity limit. With spin-orbit coupling…
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